Infineon HEXFET series, IRF2907ZSTRLPBF, N-Channel MOSFET, 75V Vdss, 160A Id, 4.5mOhm Rds(on) at 10V, 270nC Qg, D2PAK (TO-263), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 160A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 4.5mOhm @ 75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 270 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7500 pF @ 25 V |
The IRF2907ZSTRLPBF: The D2PAK (TO-263) surface-mount package with its large exposed tab lets the PCB copper plane serve as the primary heatsink, but at 300 W maximum dissipation the thermal path from tab to board area needs careful layout attention.
The total gate charge is 270 nC at 10 V.
The D2PAK (TO-263-3) package has two leads plus the drain tab.
This is the figure to use for conduction-loss calculations at the rated operating point.
Yes, the IRF2907ZSTRLPBF is ROHS3 compliant.