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Infineon Technologies IRF2807ZPBF

IRF2807ZPBF HEXFET N-Channel MOSFET, 75V 75A TO-220AB

MPNIRF2807ZPBF
End of Life

IRF2807ZPBF, HEXFET series, N-Channel MOSFET, 75V Vdss, 75A Id, 9.4mOhm Rds(on) at 10V, 110nC Qg, TO-220AB, -55°C to 175°C.

$1.95Ref. price · indicative, final on quote
Infineon Technologies IRF2807ZPBF datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF2807ZPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs9.4mOhm @ 53A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3270 pF @ 25 V

Product details

The IRF2807ZPBF: Total gate charge is 110 nC at 10 V, requiring a driver capable of sourcing and sinking that charge at the target switching frequency. Input capacitance is 3270 pF at 25 V drain-source — the driver must overcome this capacitance during each switching edge. The recommended drive voltage is 10 V for minimum Rds(on); the gate is rated ±20 V maximum.

Thermal and environmental range

This makes the part suitable for under-hood automotive, high-ambient industrial enclosures, and power stages near heat sources.

Mounting requires a screw or clip to the heatsink; thermal compound between tab and heatsink improves heat transfer.

ROHS3 compliant.

Frequently asked questions

What is the maximum junction temperature for IRF2807ZPBF?

The operating junction temperature range is -55°C to 175°C, allowing use in high-temperature environments such as under-hood automotive and industrial power stages.