IRF2807STRLPBF

Infineon Technologies · HEXFET® Series

IRF (Infineon) HEXFET® N-Channel MOSFET, 75 V Vdss, 82 A continuous drain, 13 mOhm Rds(on) @ 10 V, D2PAK (TO-263) surface mount, -55 to 175 °C junction temperature, ROHS3 compliant.

Infineon Technologies IRF2807STRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF2807STRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C82A (Tc)
Power dissipation230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs13mOhm @ 43A, 10V
Gate charge (Qg) (Max) @ vgs160 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3820 pF @ 25 V

Technical details

75 V, 82 A N-channel HEXFET in D2PAK

The 13 mOhm maximum on-resistance at 43 A with a 10 V gate drive keeps conduction losses manageable in high-current switching circuits — think DC-DC converters, motor drives, battery management, and automotive load switching.

175 °C junction — the real thermal headroom

That 175 °C Tj max is the absolute limit — not a continuous operating target — but it gives margin for transient overloads in high-ambient environments like under-hood automotive, industrial motor compartments, or sealed power supplies. The 230 W power dissipation at Tc is a package-level number; real dissipation depends on the board's ability to sink heat from the D2PAK tab.

Gate charge and input capacitance — the switching cost

For new designs or ongoing production, the supply channel is stable through standard distribution.

IRF2807STRLPBF
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