75 V, 82 A N-channel HEXFET in D2PAK
The IRF2807STRLPBF is an N-channel power MOSFET from the HEXFET series, rated for 75 V drain-source voltage and 82 A continuous drain current at a 25 °C case temperature. The 13 mOhm maximum on-resistance at 43 A with a 10 V gate drive keeps conduction losses manageable in high-current switching circuits — think DC-DC converters, motor drives, battery management, and automotive load switching. The D2PAK (TO-263) surface-mount package suits automated assembly, but the large tab is the drain connection, so the PCB footprint needs a generous copper pour and thermal vias to pull heat into the board.
175 °C junction — the real thermal headroom
The junction temperature range spans -55 °C to 175 °C. That 175 °C Tj max is the absolute limit — not a continuous operating target — but it gives margin for transient overloads in high-ambient environments like under-hood automotive, industrial motor compartments, or sealed power supplies. The 230 W power dissipation at Tc is a package-level number; real dissipation depends on the board's ability to sink heat from the D2PAK tab.
Gate charge and input capacitance — the switching cost
Gate charge is 160 nC at 10 V, and input capacitance is 3820 pF at 25 V drain bias.
Active production — no LTB pressure
The IRF2807STRLPBF carries an Active product status and is ROHS3 compliant. There is no last-time-buy notice or end-of-life signal on this part. For new designs or ongoing production, the supply channel is stable through standard distribution.