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Infineon Technologies IRF2807PBF

IRF2807PBF HEXFET N-Channel MOSFET, 75V 82A TO-220AB

MPNIRF2807PBF
End of Life

Infineon HEXFET® N-Channel MOSFET, 75 V Vdss, 82 A continuous drain, 13 mOhm Rds(on) at 10 V, TO-220AB through-hole package, -55°C to 175°C junction temperature.

$1.98Ref. price · indicative, final on quote
Infineon Technologies IRF2807PBF datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF2807PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C82A (Tc)
Power dissipation230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs13mOhm @ 43A, 10V
Gate charge (Qg) (Max) @ vgs160 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3820 pF @ 25 V

Product details

75 V / 82 A N-channel MOSFET in TO-220AB

It comes in a through-hole TO-220AB package, the standard footprint for board-level power switching in industrial and automotive applications. The 13 mOhm maximum on-resistance at 43 A with a 10 V gate drive keeps conduction losses low for load-switch, DC-DC converter, and motor-drive output stages.

Gate drive and switching considerations

Gate charge is 160 nC at 10 V.

Temperature range and thermal management

The 175°C maximum junction temperature is a hard limit for reliability calculations, not a continuous operating target.

No last-time-buy or obsolescence notice is in effect.

Frequently asked questions

What is the maximum drain current and voltage for IRF2807PBF?

The IRF2807PBF is rated for 75 V drain-to-source voltage (Vdss) and 82 A continuous drain current at 25°C case temperature.

What is the Rds(on) of IRF2807PBF at 10V?

The maximum on-resistance is 13 mOhm at 43 A drain current with a 10 V gate drive.