75 V / 82 A N-channel MOSFET in TO-220AB
The Infineon IRF2807PBF is an N-channel power MOSFET from the HEXFET® series, rated for 75 V drain-to-source voltage and 82 A continuous drain current at 25°C case temperature. It comes in a through-hole TO-220AB package, the standard footprint for board-level power switching in industrial and automotive applications. The 13 mOhm maximum on-resistance at 43 A with a 10 V gate drive keeps conduction losses low for load-switch, DC-DC converter, and motor-drive output stages.
Gate drive and switching considerations
Gate charge is 160 nC at 10 V. Input capacitance is 3820 pF at 25 V drain bias.
Temperature range and thermal management
Rated for a junction temperature range of -55°C to 175°C, this MOSFET suits environments with wide thermal swings — engine bay electronics, industrial motor drives, and outdoor telecom rectifiers. The 230 W maximum power dissipation at case temperature 25°C assumes an infinite heatsink; real designs must derate based on the thermal resistance junction-to-case and the available heatsinking. The 175°C maximum junction temperature is a hard limit for reliability calculations, not a continuous operating target.
Lifecycle and sourcing
The IRF2807PBF is listed as Active in production with RoHS3 compliance. No last-time-buy or obsolescence notice is in effect.