Skip to main content
Infineon Technologies IRF2805PBF
Infineon Technologies

IRF2805PBF HEXFET N-Ch MOSFET, 55V 75A TO-220AB, 4.7 mOhm

MPNIRF2805PBF
End of Life

Infineon HEXFET® IRF2805PBF, N-Channel MOSFET, 55 V drain-source, 75 A continuous drain, 4.7 mOhm Rds(on) at 10 V, TO-220AB through-hole, -55°C to 175°C junction.

$2.55Ref. price · indicative, final on quote
IRF2805PBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF2805PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation330W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.7mOhm @ 104A, 10V
Gate charge (Qg) (Max) @ vgs230 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5110 pF @ 25 V

Product details

4.7 mOhm Rds(on) at 10 V — conduction loss floor for a 55 V rail

The TO-220AB through-hole package keeps the thermal path short: 330 W maximum power dissipation at the case, with the junction rated to 175 °C.

Gate charge and switching budget

Total gate charge is 230 nC at 10 V. For a 100 kHz switching frequency the average gate-drive current is 23 mA, but the peak current during the Miller plateau determines the transition time. The 5110 pF input capacitance at 25 V drain-source gives a rough handle on the driver's sourcing and sinking capability — a gate resistor in the 5–10 Ohm range keeps the ringing under control without stretching the switching loss window.

Frequently asked questions

What is the Rds(on) of IRF2805PBF?

This is the worst-case figure at 25 °C junction; actual Rds(on) rises with temperature per the normalised curve in the datasheet.

What is the gate charge of IRF2805PBF?

The input capacitance is 5110 pF at 25 V drain-source. These numbers set the gate-driver peak current requirement for the target switching frequency.