Infineon Technologies · HEXFET® Series
Infineon HEXFET® IRF2805PBF, N-Channel MOSFET, 55 V drain-source, 75 A continuous drain, 4.7 mOhm Rds(on) at 10 V, TO-220AB through-hole, -55°C to 175°C junction.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 75A (Tc) |
| Power dissipation | 330W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 4.7mOhm @ 104A, 10V |
| Gate charge (Qg) (Max) @ vgs | 230 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5110 pF @ 25 V |
The TO-220AB through-hole package keeps the thermal path short: 330 W maximum power dissipation at the case, with the junction rated to 175 °C.
Total gate charge is 230 nC at 10 V. The 5110 pF input capacitance at 25 V drain-source gives a rough handle on the driver's sourcing and sinking capability — a gate resistor in the 5–10 Ohm range keeps the ringing under control without stretching the switching loss window.