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Infineon Technologies IRF250P225

IRF250P225 MOSFET N-CH 250V 69A TO-247AC, 22 mOhm

MPNIRF250P225
End of Life

Infineon StrongIRFET™ IRF250P225, N-Channel MOSFET, 250 V Vdss, 69 A continuous drain, 22 mOhm Rds(on) at 10 V, TO-247AC through-hole, -55°C to 175°C.

$6.5Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesStrongIRFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF250P225 specifications
ParameterValue
SeriesStrongIRFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C69A (Tc)
Power dissipation313W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs22mOhm @ 41A, 10V
Gate charge (Qg) (Max) @ vgs96 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4897 pF @ 50 V

Product details

250 V, 69 A N-channel — StrongIRFET™ in TO-247AC

The Infineon IRF250P225 is a 250 V, 69 A N-channel MOSFET from the StrongIRFET™ series, built for high-current switching in industrial power stages. It comes in a through-hole TO-247AC package, rated for junction temperatures up to 175°C.

Input capacitance Ciss is 4897 pF at Vds = 50 V, which together with the gate charge defines the switching energy. The 313 W power dissipation rating (Tc) gives the thermal budget for continuous operation when mounted on an adequate heatsink.

Frequently asked questions

What is the Rds(on) of IRF250P225?

The maximum Rds(on) is 22 mOhm at Vgs = 10 V and Id = 41 A. This is the conduction-loss spec for a 250 V N-channel in a TO-247 package.

Is IRF250P225 RoHS compliant?

Yes, it is ROHS3 compliant per the lifecycle record.