250 V, 96 A, 12 mOhm — high-current switching MOSFET
The 12 mOhm maximum on-resistance at Vgs=10 V and 58 A sets the conduction loss floor for a high-current switching stage. The 203 nC gate charge at Vgs=10 V means the gate driver must supply enough peak current to charge and discharge the gate within the target switching dead-time. At 100 kHz switching, the average gate-drive current is about 20 mA, but the peak current from the driver needs to be several amperes to keep switching losses under control. The 9915 pF input capacitance at Vds=50 V is a direct consequence of the large die needed for the 96 A rating. This capacitance dominates the switching speed; a gate-driver with at least 2 A peak source/sink capability is recommended for hard-switched applications above 50 kHz.
Through-hole TO-247AC — thermal and assembly considerations
The TO-247AC through-hole package (three leads, isolated tab) is designed for bolting to a heatsink. The 313 W maximum power dissipation at case temperature assumes the case is held at 25°C — in practice, the junction-to-case thermal resistance sets the real power limit for the chosen heatsink and airflow.