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Infineon Technologies IRF241 — Discrete Semiconductors

IRF241 HEXFET N-Channel MOSFET, 150V 18A TO-204AE

MPNIRF241
Active

IRF241, HEXFET N-Channel MOSFET, 150 V, 18 A, 125 W, TO-204AE through-hole package, active lifecycle.

$1.53Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF241 Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeThrough Hole
Power_w125.0
Package_typeBulk
Product_statusActive
Supply_voltage_v150.0
Switching_current_a18.0

Product details

150 V, 18 A — the voltage class that saves you from 100 V bus blow-ups

The IRF241 is an N-channel HEXFET MOSFET rated at 150 V drain-source and 18 A continuous drain current, in a TO-204AE through-hole package. That 150 V rating puts it solidly above the 48 V to 100 V bus range — you get derating headroom without jumping to a 200 V part that costs more and switches slower. The 125 W power dissipation tells you the thermal budget: at 18 A the Rds(on) will need a heatsink, but the TO-204AE (the old TO-3 can) bolts to a chassis or heatsink with two screws — no PCB pad to pull heat through.

125 W is the maximum power the die can shed at 25 °C case temperature. In a real motor drive or battery charger running at 10 A and 0.2 Ω Rds(on) (hot), that is 20 W of conduction loss — well inside the 125 W ceiling, but you still need a heatsink sized for the ambient. The TO-204AE case gives you a metal tab that bolts directly to a chassis; a smear of thermal grease and two 4-40 screws and you are done. No lab, no bench — swap it on site if the old one blew.

No need to stockpile or chase a replacement yet.

Frequently asked questions

What is the difference between IRF241 and IRF240?

The IRF241 is rated at 150 V drain-source, while the IRF240 is a 200 V part. Both are N-channel HEXFETs in the same TO-204AE package, but the 150 V rating of the IRF241 gives a lower Rds(on) for the same die area — better conduction efficiency if your bus voltage stays under 100 V.