IRF2204PBF, HEXFET N-Channel MOSFET, 40 V Vdss, 210 A Id, 3.6 mOhm Rds(on) at 10 V, 200 nC Qg, TO-220AB, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 210A (Tc) |
| Power dissipation | 330W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3.6mOhm @ 130A, 10V |
| Gate charge (Qg) (Max) @ vgs | 200 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5890 pF @ 25 V |
At 130 A and 10 Vgs, the on-resistance ceiling is 3.6 mOhm. That translates to about 61 W conduction loss at full current — within the 330 W package dissipation limit, but the junction temperature rise at 175 °C max means the heatsink selection is the real design variable, not the die itself.
Yes, the part is ROHS3 compliant.