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Infineon Technologies IRF200P222

IRF200P222 N-Channel MOSFET, 200V 182A TO-247AC, 6.6 mOhm

MPNIRF200P222
End of Life

Infineon StrongIRFET IRF200P222, N-Channel MOSFET, 200V Vdss, 182A Id, 6.6 mOhm Rds(on) at 10V, 203 nC Qg, TO-247-3 / TO-247AC, -55 to 175°C.

$10.82Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF200P222 Technical Specifications
ParameterValue
SeriesStrongIRFET™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C182A (Tc)
Power dissipation556W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs6.6mOhm @ 82A, 10V
Gate charge (Qg) (Max) @ vgs203 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9820 pF @ 50 V

Product details

6.6 mOhm at 10V — the conduction-loss floor for a 200V switch

The headline figure is the 6.6 mOhm max on-resistance at 10V gate drive and 82A — this sets the I²R conduction loss that determines the heatsink size and the PCB copper pour for the TO-247AC tab.

203 nC gate charge and the gate-driver budget

Total gate charge at 10V is 203 nC, with an input capacitance of 9820 pF at 50V drain. For a 100 kHz switching frequency, the average gate-drive current needed is 20.3 mA; the peak current is set by the driver's source/sink capability and the external gate resistor. The ±20V Vgs(max) rating gives headroom for a 12V or 15V gate drive without clamping.

175°C junction — the thermal design target

Power dissipation is rated 556W at Tc=25°C. The TO-247AC package's large tab area and isolated mounting hole simplify direct heatsink attachment — the thermal resistance from junction to case is the limiting factor, not the plastic body.

ROHS3 compliant. For a production BOM, this means no supply-risk flag from imminent obsolescence.

Frequently asked questions

What is the Rds(on) of IRF200P222 at 10V?

The maximum on-resistance is 6.6 mOhm at 82A drain current with 10V gate drive. This is the conduction-loss figure used for thermal and efficiency calculations in a 200V-rated switch.

Is IRF200P222 obsolete or active?

Active. The manufacturer's lifecycle record lists the product status as current production. No end-of-life notice or last-time-buy has been announced for this order code.

What is the gate charge (Qg) of IRF200P222?

Total gate charge at 10V is 203 nC. This value determines the gate-driver power requirement and the switching-loss contribution at a given frequency.