200 V, 12 A N-channel — the StrongIRFET™ workhorse
It comes in a TO-220AB through-hole package — the tab is the drain, so a single screw to a heatsink handles both electrical connection and thermal management.
The 170 mOhm Rds(on) is specified at 7.2 A drain current and 10 V gate drive — that's the max at 25°C junction. At 175°C the on-resistance roughly doubles, so for a 12 A load the conduction loss at high temperature lands around 4 W, which the 80 W package power rating can handle with a decent heatsink. The 23 nC total gate charge at 10 V means the driver needs to deliver about 23 nC per switching event; at 100 kHz that's 2.3 mA average gate current, but the peak current during the Miller plateau determines the switching time. The ±20 V maximum gate-source voltage gives margin for gate-drive overshoot in hard-switching topologies, and the 4.9 V max threshold at 50 µA means the device is fully enhanced with a standard 10 V gate drive.