IRF150P220AKMA1

Infineon Technologies · StrongIRFET™ Series

Infineon StrongIRFET™ series, IRF150P220AKMA1, N-Channel MOSFET, 150V Vdss, 203A Id, 2.7mOhm Rds(on) max @ 100A/10V, 200nC Qg, TO-247-3 through-hole, -55°C to 175°C.

Infineon Technologies IRF150P220AKMA1
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Technical specifications

IRF150P220AKMA1 specifications
Parameter / AttributeSpecification / Value
SeriesStrongIRFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C203A (Tc)
Power dissipation3.8W (Ta), 556W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.6V @ 265µA
Rds on (Max) @ id, vgs2.7mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs200 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds12000 pF @ 75 V

Technical details

StrongIRFET™ N-channel — 150 V, 203 A, 2.7 mOhm

The Infineon IRF150P220AKMA1 is a 150 V, 203 A N-channel MOSFET from the StrongIRFET™ series, housed in a TO-247-3 through-hole package. It targets high-current switching applications where conduction loss dominates — motor drives, battery management systems, DC-DC converters, and industrial power supplies. The headline 2.7 mOhm Rds(on) max at 100 A and 10 V gate drive keeps I²R losses low enough that a single TO-247 can handle loads that would otherwise require paralleled smaller devices.

Gate charge and switching budget

The 200 nC gate charge at 10 V and 12000 pF input capacitance at 75 V Vds set the drive requirement.

Thermal and mechanical fit

The TO-247-3 package (PG-TO247-3) is a standard through-hole footprint with a large metal tab for heatsink mounting. The 556 W power dissipation at case temperature tells you this part needs a substantial heatsink and forced airflow if you plan to run anywhere near the 203 A continuous current. The 3.8 W at ambient is the free-air limit — essentially a derating floor.

IRF150P220AKMA1
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