Infineon HEXFET IRF1404STRLPBF N-channel MOSFET, 40 V drain-source, 162 A continuous drain current, 4 mOhm max Rds(on) at 10 V gate drive, D2PAK surface-mount package, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 162A (Tc) |
| Power dissipation | 3.8W (Ta), 200W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 4mOhm @ 95A, 10V |
| Gate charge (Qg) (Max) @ vgs | 200 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7360 pF @ 25 V |
The IRF1404STRLPBF: Total gate charge is 200 nC at 10 V. Input capacitance is 7360 pF at 25 V drain.
Maximum power dissipation is 200 W at the case, and 3.8 W at ambient. The D2PAK tab must be soldered to a substantial copper pour.
Maximum on-resistance is 4 mOhm at 95 A drain current with 10 V gate drive. This is the value used for conduction-loss calculations in the power stage.