Infineon HEXFET® series, IRF1404L, N-Channel MOSFET, 40 V drain-source, 162 A continuous drain, 4 mΩ Rds(on) at 10 V, TO-262-3 (I²Pak) through-hole package, -55 to 175 °C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 162A (Tc) |
| Power dissipation | 3.8W (Ta), 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 4mOhm @ 95A, 10V |
| Gate charge (Qg) (Max) @ vgs | 200 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7360 pF @ 25 V |
The 200 W package power dissipation rating (case temperature) confirms this part is designed for bolted-down mounting on a metal substrate or heatsink, not free-air operation.
Buyers should verify date codes and request counterfeit screening for any stock sourced outside the authorized channel.
The evidence does not list an official replacement or cross-reference. A functionally similar part in the same HEXFET family may be the IRF1404 (non-L, different package), but pin compatibility and electrical equivalence should be verified against the target application before substitution.