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Infineon Technologies IRF135S203

IRF135S203 MOSFET N-CH 135V 129A TO263-3, 8.4 mOhm Rds(on)

MPNIRF135S203
End of Life

Infineon HEXFET® StrongIRFET™ IRF135S203, N-Channel MOSFET, 135 Vdss, 129 A Id, 8.4 mOhm Rds(on) at 77 A, 270 nC Qg, TO-263-3 D²Pak, -55°C to 175°C.

$3.42Ref. price · indicative, final on quote
Infineon Technologies IRF135S203 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®, StrongIRFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF135S203 specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage135 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C129A (Tc)
Power dissipation441W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8.4mOhm @ 77A, 10V
Gate charge (Qg) (Max) @ vgs270 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9700 pF @ 50 V

Product details

Gate charge and driver budget

Total gate charge is 270 nC at 10 V — a standard MCU GPIO or a 0.5 A gate driver will struggle to switch this FET at any useful frequency. Plan for a dedicated gate driver capable of 2 A peak source/sink to keep the switching edges clean and the cross-conduction interval short. The input capacitance of 9700 pF at 50 V Vds confirms the driver needs to deliver a stiff gate voltage slew rate.

Package reality — rework and thermal management

The large copper pad on the bottom soaks heat fast — a standard hot-air station without bottom preheat will struggle to lift this part without cooking the board. Use a preheat plate at 150 °C and a wide-tip soldering iron for the tab solder joint. Orientation is marked by a bevel on the top edge — find pin 1 before the hot air goes on.

Temperature range and production status

Frequently asked questions

What is the Rds(on) of IRF135S203?

Maximum on-resistance is 8.4 mOhm at 77 A drain current with 10 V gate-to-source drive. This is the value to use for worst-case conduction loss calculations at 25 °C junction; the actual Rds(on) increases with temperature per the normalised curve in the datasheet.

What is the gate charge of IRF135S203?

Total gate charge is 270 nC maximum at 10 V gate drive. This is the charge the gate driver must deliver each switching cycle — at 50 kHz switching frequency the average gate drive current is 13.5 mA, but the peak current requirement is much higher for fast rise/fall times.