Hermetic N-Channel HEXFET — 60 V, 7 A, Military Temp Range
The IRF123 is an N-channel hermetic HEXFET MOSFET from Infineon Technologies, rated for 60 V drain-source voltage and 7 A continuous drain current. The hermetic package (Through Hole, Bulk) is the defining feature — it seals the die against moisture and contamination, making this part suited for high-reliability environments where standard plastic-packaged MOSFETs would fail. This means it operates reliably in avionics bay, satellite bus, or downhole instrumentation where the ambient temperature swings exceed commercial or industrial limits.
On-Resistance and Gate Drive — Switching Loss Budget
This is the conduction loss figure for the BOM — at 7 A full load, the Rds(on) will be higher due to the positive temperature coefficient, so the thermal design should budget for approximately 0.6-0.8 Ohm at the 150°C junction limit. Total gate charge is 15 nC at 10 V. For a 100 kHz switching frequency, the gate drive current required is 1.5 mA average — well within the capability of a standard gate driver IC. The 4 V threshold at 250 µA means the MOSFET is fully enhanced by a 12 V gate drive rail, but a 5 V logic-level drive may not saturate it to the rated Rds(on). Maximum gate-source voltage is ±20 V, so a standard 12 V gate drive with a -5 V turn-off swing stays within the absolute maximum rating. No external zener clamp is needed for this drive scheme.
Active Lifecycle — Sourcing for Production and Spares
Supplied in Bulk packaging (Through Hole), the IRF123 is not tape-and-reel — it ships in tubes or trays. For automated insertion lines, verify the feeder compatibility; manual or semi-automated placement is typical for this package format.