Infineon Technologies IRF1 Discrete Semiconductors Series

3 variants · Infineon TechnologiesAll Discrete Semiconductors →

About the Infineon Technologies IRF1 Discrete Semiconductors Series

The Infineon Technologies IRF1 Discrete Semiconductors Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common FET type of N-Channel, package_type of Bulk and vgs of ±20 V. Variants differ by capacitance_uf, gate charge (Qg) (Max) @ vgs and mounting, so you can match the exact capacitance_uf your application requires using the selection guide below. All listed Infineon Technologies IRF1 Discrete Semiconductors Series part numbers are active and orderable.

Select a variant by

Capacitance_uf: 0.0006 · 0.0016 · 0.0048
Gate charge (Qg) (Max) @ vgs: 15 nC @ 10 V · 60 nC @ 10 V · 180 nC @ 10 V
Mounting: Surface Mount · Through Hole
Operating temperature high: -55°C to 150°C(TJ) · -55°C to 175°C(TJ)
Power: 40.0 · 125.0 · 230.0
Rds on (Max) @ id, vgs: 4.9mOhm @ 75 A, 10 V · 110mOhm @ 15 A, 10 V · 400mOhm @ 4 A, 10 V
Supply voltage: 55.0 · 60.0
Switching current: 7.0 · 24.0 · 75.0

Shared specifications

FET type: N-Channel
Package_type: Bulk
Vgs: ±20 V
Vgs(Th) (Max) @ id: 4 V @ 250µA

Variant comparison

Parameter	IRF123	IRF1405ZSTRLPBF	IRF143
Capacitance_uf	0.0006	0.0048	0.0016
Gate charge (Qg) (Max) @ vgs	15 nC @ 10 V	180 nC @ 10 V	60 nC @ 10 V
Mounting	Through Hole	Surface Mount	Through Hole
Operating temperature high	-55°C to 150°C(TJ)	-55°C to 175°C(TJ)	-55°C to 150°C(TJ)
Power	40.0	230.0	125.0
Rds on (Max) @ id, vgs	400mOhm @ 4 A, 10 V	4.9mOhm @ 75 A, 10 V	110mOhm @ 15 A, 10 V
Supply voltage	60.0	55.0	60.0
Switching current	7.0	75.0	24.0

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