Infineon HEXFET series, IRF1018ESTRLPBF, N-Channel MOSFET, 60 V Vdss, 79 A Id, 8.4 mOhm Rds(on) at 10 V, 69 nC Qg, D2PAK (TO-263), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 79A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 100µA |
| Rds on (Max) @ id, vgs | 8.4mOhm @ 47A, 10V |
| Gate charge (Qg) (Max) @ vgs | 69 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2290 pF @ 50 V |
The IRF1018ESTRLPBF: Total gate charge is 69 nC at 10 V. The 2290 pF input capacitance at 50 V Vds charges each cycle.
The 110 W maximum power dissipation at 25 °C case temperature assumes the tab is held at that temperature — real-world derating depends on the board's copper thickness and airflow. The -55 °C to 175 °C junction range covers automotive under-hood and industrial motor-drive environments.
This is the spec to use for worst-case conduction loss calculations in the thermal design.
Yes, the IRF1018ESTRLPBF is ROHS3 compliant, meaning it meets the EU RoHS directive's substance restrictions including lead, mercury, and cadmium.