IRF1010NSTRLPBF specifications
Parameter / Attribute	Specification / Value
Series	HEXFET®
FET type	N-Channel
Mounting	Surface Mount
Drain to source voltage	55 V
Drive voltage (Max rds on, min rds on)	10V
Current - continuous drain (Id) @ 25°C	85A (Tc)
Power dissipation	180W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Package	Tape & Reel (TR); Cut Tape (CT)
Vgs	±20V
Technology	MOSFET (Metal Oxide)
Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id	4V @ 250µA
Rds on (Max) @ id, vgs	11mOhm @ 43A, 10V
Gate charge (Qg) (Max) @ vgs	120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	3210 pF @ 25 V

Technical details

The IRF1010NSTRLPBF: Gate charge is 120 nC at 10 V; input capacitance is 3210 pF at 25 V. Rds(on) is 11 mOhm at 43 A and 10 V drive.

D2PAK thermal and layout considerations

Power dissipation is 180 W at case temperature. Gate-source rating is ±20 V.

It is ROHS3 compliant, with no exemptions that would restrict its use in new designs targeting European or global markets.

For volume requirements or urgent line-down situations, submit an RFQ and we will source against the verified production date code.

IRF1010NSTRLPBF

[ALLOC] verified