Skip to main content
Infineon Technologies IRF1010NSTRLPBF
Infineon Technologies

IRF1010NSTRLPBF HEXFET N-Channel MOSFET, 55V, 85A, D2PAK

MPNIRF1010NSTRLPBF
End of Life

Infineon HEXFET series, IRF1010NSTRLPBF N-Channel MOSFET, 55V Vdss, 85A Id, 11mOhm Rds(on) at 10V, 120nC Qg, D2PAK surface mount, -55°C to 175°C.

$2.16Ref. price · indicative, final on quote
IRF1010NSTRLPBF datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF1010NSTRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C85A (Tc)
Power dissipation180W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 43A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3210 pF @ 25 V

Product details

The IRF1010NSTRLPBF: Gate charge is 120 nC at 10 V; input capacitance is 3210 pF at 25 V. Rds(on) is 11 mOhm at 43 A and 10 V drive.

D2PAK thermal and layout considerations

Power dissipation is 180 W at case temperature. Gate-source rating is ±20 V.

Active production and compliance

It is ROHS3 compliant, with no exemptions that would restrict its use in new designs targeting European or global markets.

Sourcing and quoting

For volume requirements or urgent line-down situations, submit an RFQ and we will source against the verified production date code.

Frequently asked questions

What is the Rds(on) of IRF1010NSTRLPBF?

The maximum on-resistance is 11 mOhm at 43 A drain current and 10 V gate drive. This value is specified at 25 °C junction temperature; expect the resistance to increase with temperature, roughly 1.5× at 125 °C.

What is the gate charge of IRF1010NSTRLPBF?

The maximum total gate charge is 120 nC at 10 V gate-source voltage. This determines the gate-drive current needed for a given switching frequency — for example, 120 nC at 100 kHz requires an average gate current of 12 mA.

Is IRF1010NSTRLPBF RoHS compliant?

Yes, the IRF1010NSTRLPBF is ROHS3 compliant, with no restricted substances above the threshold limits.