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Infineon Technologies IRF1010NPBF
Infineon Technologies

IRF1010NPBF HEXFET N-Ch MOSFET, 55V 85A TO-220AB

MPNIRF1010NPBF
End of Life

Infineon HEXFET® N-Channel MOSFET, IRF1010NPBF, 55 V Vdss, 85 A continuous drain, 11 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C operating junction temperature.

$1.74Ref. price · indicative, final on quote
IRF1010NPBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF1010NPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C85A (Tc)
Power dissipation180W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 43A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3210 pF @ 25 V

Product details

What the IRF1010NPBF is and where it fits

The Infineon IRF1010NPBF is an N-channel enhancement-mode MOSFET from the HEXFET® series, rated for 55 V drain-source breakdown and 85 A continuous drain current at 25°C case temperature. Packaged in a standard TO-220AB through-hole package, it targets high-current switching applications such as DC-DC converters, motor drives, battery protection circuits, and automotive power distribution where low conduction loss matters. The 11 mOhm maximum on-resistance at 43 A and 10 V gate drive keeps dissipation manageable in a 180 W package.

Lifecycle and compliance

The IRF1010NPBF carries an Active product status and is RoHS3 compliant. The HEXFET® series is a mature, widely second-sourced platform.

Frequently asked questions

What is the IRF1010NPBF's on-resistance at its typical operating point?

Maximum on-resistance is 11 mOhm at 43 A drain current with a 10 V gate drive, which defines conduction losses for thermal design.