Packaged in a standard TO-220AB through-hole package, it targets high-current switching applications such as DC-DC converters, motor drives, battery protection circuits, and automotive power distribution where low conduction loss matters. The 11 mOhm maximum on-resistance at 43 A and 10 V gate drive keeps dissipation manageable in a 180 W package.
IRF1010NPBF HEXFET N-Ch MOSFET, 55V 85A TO-220AB
MPNIRF1010NPBF
End of Life
Infineon HEXFET® N-Channel MOSFET, IRF1010NPBF, 55 V Vdss, 85 A continuous drain, 11 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C operating junction temperature.
$1.74Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 85A (Tc) |
| Power dissipation | 180W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 11mOhm @ 43A, 10V |
| Gate charge (Qg) (Max) @ vgs | 120 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3210 pF @ 25 V |
Product details
Frequently asked questions
What is the IRF1010NPBF's on-resistance at its typical operating point?
Maximum on-resistance is 11 mOhm at 43 A drain current with a 10 V gate drive, which defines conduction losses for thermal design.