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Infineon Technologies IRF1010EZPBF

IRF1010EZPBF N-Channel MOSFET, 60V 75A TO-220AB, HEXFET®

MPNIRF1010EZPBF
End of Life

Infineon HEXFET® IRF1010EZPBF, N-channel MOSFET, 60 V Vds, 75 A Id, 8.5 mOhm Rds(on) at 51 A, 10 V Vgs, 86 nC Qg, TO-220AB, -55°C to 175°C.

$1.62Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF1010EZPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs8.5mOhm @ 51A, 10V
Gate charge (Qg) (Max) @ vgs86 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2810 pF @ 25 V

Product details

8.5 mOhm at 51 A — conduction loss floor

The IRF1010EZPBF is an Infineon HEXFET® N-channel power MOSFET in a through-hole TO-220AB package. The 140 W power dissipation at case temp defines the heatsink requirement for continuous operation.

Total gate charge is 86 nC at 10 V Vgs. This is a standard-logic-level gate — a 5 V microcontroller output will not fully enhance it; use a gate driver or a 10 V rail.

This part suits avionics, downhole tools, and high-ambient industrial enclosures where the junction sees sustained thermal stress. The TO-220AB package is a standard three-lead through-hole footprint with a metal tab for heatsink attachment. Maximum Vgs is ±20 V, so the gate can tolerate transients above the 10 V drive rail without avalanche failure — useful in noisy motor-drive environments.

ROHS3 compliant per.

Frequently asked questions

What is the Rds(on) of the IRF1010EZPBF?

Maximum on-resistance is 8.5 mOhm at 51 A drain current and 10 V gate drive. This is the value to use for worst-case conduction loss calculations.

Is the IRF1010EZPBF RoHS compliant?

Yes, it is listed as ROHS3 compliant.

What is the closest functional second-source for the IRF1010EZPBF?

The IPD50R950CEAUMA1 is a CoolMOS™ CE N-channel MOSFET, but it is a 500 V, 4.3 A, 950 mOhm surface-mount device — a different voltage and current class. It is not a pin-compatible drop-in for the IRF1010EZPBF.