8.5 mOhm at 51 A — conduction loss floor
The IRF1010EZPBF is an Infineon HEXFET® N-channel power MOSFET in a through-hole TO-220AB package. Continuous drain current is 75 A at 25 °C case temperature, with a 60 V drain-to-source breakdown. The 140 W power dissipation at case temp defines the heatsink requirement for continuous operation.
Gate charge and switching speed
Total gate charge is 86 nC at 10 V Vgs. For a 100 kHz switching frequency, the average gate-drive current is 8.6 mA — a standard driver IC handles this easily. The 2810 pF input capacitance at 25 V Vds gives a rough Miller plateau timescale; pair it with a driver that can source and sink at least 1 A for fast turn-on transitions. Gate threshold is 4 V max at 100 µA drain current, and the recommended drive voltage for minimum Rds(on) is 10 V. This is a standard-logic-level gate — a 5 V microcontroller output will not fully enhance it; use a gate driver or a 10 V rail.
Temperature range and package
Junction temperature range is -55°C to 175°C — a full military-grade envelope. This part suits avionics, downhole tools, and high-ambient industrial enclosures where the junction sees sustained thermal stress. The TO-220AB package is a standard three-lead through-hole footprint with a metal tab for heatsink attachment. Maximum Vgs is ±20 V, so the gate can tolerate transients above the 10 V drive rail without avalanche failure — useful in noisy motor-drive environments.
ROHS3 compliant per.