60V, 84A N-channel HEXFET in D2PAK
The Infineon IRF1010ESTRLPBF is a 60V, 84A N-channel power MOSFET from the HEXFET series, housed in a D2PAK (TO-263) surface-mount package. It is designed for high-current switching applications where low on-resistance and fast switching are required.
Rds(on) of 12 mOhm at 50A, 10V sets the conduction loss floor at 30W (I²R) at full rated current — the D2PAK package with its exposed tab can sink that into a copper plane if the PCB layout provides a low-thermal-resistance path. Total gate charge of 130 nC at 10V means the gate driver must supply 130 nC per switching event. At 100 kHz switching frequency, that is 13 mA average drive current — within the capability of most dedicated MOSFET gate drivers, but a factor to check when using a microcontroller GPIO directly. Input capacitance Ciss of 3210 pF at 25V Vds contributes to the Miller plateau duration; the driver's peak current capability determines the actual turn-on and turn-off delay, so pair this MOSFET with a driver rated for at least 2A peak to keep switching edges clean.
Temperature grade and deployment envelope
The 200W power dissipation at case temperature (Tc) is a package-limited rating; actual usable dissipation depends on the PCB copper area and airflow. The D2PAK's exposed drain tab should be soldered to a large copper pour for thermal relief.
Sourcing and lifecycle posture
ROHS3 compliant, it is suitable for new designs requiring a lead-free, RoHS-compliant bill of materials. The D2PAK footprint is shared across the HEXFET family, so a board layout designed for this part can accommodate other 60V N-channel D2PAK devices from the same series.