60 V, 84 A N-channel HEXFET in a TO-220AB
The Infineon IRF1010EPBF is a 60 V, 84 A N-channel power MOSFET from the HEXFET series, built on a planar stripe MOSFET (Metal Oxide) technology. It comes in a through-hole TO-220AB package.
IRF1010EPBF
Infineon Technologies · HEXFET® Series
Infineon HEXFET IRF1010EPBF, N-Channel MOSFET, 60V Vdss, 84A Id, 12mOhm Rds(on) @ 10V, TO-220AB, -55°C to 175°C junction.
[IN STOCK] In Stock: 3,154 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 84A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 12mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 130 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3210 pF @ 25 V |
Technical details
IRF1010EPBF
[ALLOC] verified