Infineon HEXFET IRF1010EPBF, N-Channel MOSFET, 60V Vdss, 84A Id, 12mOhm Rds(on) @ 10V, TO-220AB, -55°C to 175°C junction.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 84A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 12mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 130 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3210 pF @ 25 V |
The Infineon IRF1010EPBF is a 60 V, 84 A N-channel power MOSFET from the HEXFET series, built on a planar stripe MOSFET (Metal Oxide) technology. It comes in a through-hole TO-220AB package.
The IRF1010EPBF is listed as Active with ROHS3 compliance. No LTB or EOL notice is on record for this order code, so it remains a valid choice for new designs and production BOMs.
The IRF3205 is a 55 V, 110 A N-channel MOSFET also in a TO-220AB, while the IRF1010EPBF is 60 V, 84 A. The IRF3205 offers higher current but a lower voltage rating. For a 48 V bus the IRF1010EPBF's 60 V rating gives better derating headroom; for a 12 V or 24 V rail the IRF3205's higher current capability may be preferred. Both share the same footprint and gate-drive voltage requirement of 10 V.
Within the HEXFET family, the IRF3205 (55 V, 110 A) is a common pin-compatible alternative in the same TO-220AB package, though its lower Vdss may not suit all applications. No official Infineon cross-reference to an alternate order code is listed here.