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Infineon Technologies IRF100S201

IRF100S201 N-Channel MOSFET, 100V, 192A, D²Pak-3

MPNIRF100S201
End of Life

Infineon IRF100S201, HEXFET® StrongIRFET™, N-Channel MOSFET, 100V Vdss, 192A Id, 4.2mOhm Rds(on) at 10V, 255nC Qg, TO-263-3 D²Pak, -55°C to 175°C.

$2.74Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF100S201 Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C192A (Tc)
Power dissipation441W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.2mOhm @ 115A, 10V
Gate charge (Qg) (Max) @ vgs255 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9500 pF @ 50 V

Product details

100 V, 192 A N-Channel in D²Pak — the conduction-loss anchor

The IRF100S201: It sits in a TO-263-3 (D²Pak) surface-mount package with the exposed tab serving as the thermal and electrical drain connection.

Maximum on-resistance is 4.2 mOhm at 115 A drain current with 10 V gate drive. That 4.2 mOhm at 115 A is the conduction-loss baseline — at 115 A the I²R loss is about 55 W, which the 441 W package rating can sink with a proper heatsink and airflow. Total gate charge is 255 nC at 10 V. Input capacitance is 9500 pF at 50 V Vds.

Temperature range and package — board-level fit

Operating junction temperature spans -55 °C to 175 °C, covering automotive under-hood and industrial motor-drive environments where the case temperature can climb under sustained load. The TO-263-3 (D²Pak) footprint requires a copper pour on the drain tab for thermal spreading — the 441 W dissipation rating assumes the tab is soldered to a substantial board plane.

Frequently asked questions

What is the Rds(on) of IRF100S201?

Maximum Rds(on) is 4.2 mOhm at 115 A drain current with 10 V gate drive.

What is the gate charge of IRF100S201?

Total gate charge is 255 nC at 10 V gate drive.

What package is IRF100S201 in?

The IRF100S201 is supplied in a TO-263-3 (D²Pak) surface-mount package, also designated PG-TO263-3.