IR2301SPBF

Infineon Technologies

Infineon IR2301SPBF high-side/low-side gate driver, 8-SOIC surface mount, drives IGBT and N-Channel MOSFET, 200mA source / 350mA sink peak output, 600V bootstrap voltage, 5V to 20V supply, -40°C to 150°C junction temperature.

IR2301SPBF
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[IN STOCK] In Stock: 2 pcs
$3.72/ pc

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Technical specifications

IR2301SPBF specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage5V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.9V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)200mA, 350mA
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHigh-Side or Low-Side
Rise (Fall time)130ns, 50ns

Technical details

IR2301SPBF
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