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Infineon Technologies IR2301SPBF — Analog & Data Acquisition

IR2301SPBF Gate Driver, High/Low Side, 600V Bootstrap

MPNIR2301SPBF
End of Life

Infineon IR2301SPBF high-side/low-side gate driver, 8-SOIC surface mount, drives IGBT and N-Channel MOSFET, 200mA source / 350mA sink peak output, 600V bootstrap voltage, 5V to 20V supply, -40°C to 150°C junction temperature.

$2.24Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IR2301SPBF Technical Specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
Mounting typeSurface Mount
Voltage5V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.9V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)200mA, 350mA
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHigh-Side or Low-Side
Rise (Fall time)130ns, 50ns

Product details

What the IR2301SPBF is and where it fits

The Infineon IR2301SPBF is a high-side or low-side gate driver in an 8-SOIC package, designed to drive IGBTs and N-Channel MOSFETs in half-bridge or independent-channel configurations. It handles bootstrap supply up to 600 V on the high side, making it a natural fit for motor drives, uninterruptible power supplies, and PFC stages where the DC bus sits at several hundred volts. The two channels are independent and non-inverting, so you can use them as a complementary half-bridge pair or as two separate low-side drivers — the datasheet shows both arrangements.

Package and mounting

Peak output current is 200 mA source, 350 mA sink. Typical rise time is 130 ns, fall time 50 ns. Supply range is 5 V to 20 V. Logic input thresholds are 0.8 V (VIL) and 2.9 V (VIH). High-side bootstrap rating is 600 V. Junction temperature range is -40°C to 150°C, which puts it in the industrial/motor-drive class. That 150°C junction ceiling is not a case temperature — derate the output current if the board runs hot inside an enclosed drive.

Package and mounting

The 8-SOIC (0.154", 3.90 mm width) is a standard footprint — no surprises under the hot-air station. The part ships in Tube form, which means it arrives in a stiff plastic carrier with the leads protected. If you are feeding a pick-and-place, you will need to transfer to tape or order a tape-and-reel variant — the IR2301SPBF is Tube only.

Lifecycle and sourcing

The IR2301SPBF is listed as Active with ROHS3 compliance. For dual-sourcing resilience, the closest functional peer in the same family is the IR21064STRPBF — same gate type (IGBT, N-Channel MOSFET), same non-inverting independent channels, same 150°C junction rating, and same 8-SOIC footprint. The IR21064 has a slightly slower rise time (150 ns vs 130 ns) and a 10 V minimum supply, so check the supply rail before swapping.

Frequently asked questions

What is the equivalent of IR2301SPBF?

The closest functional equivalent is the IR21064STRPBF — same gate type (IGBT, N-Channel MOSFET), same non-inverting independent channels, same 8-SOIC footprint, and same 150°C junction rating. The IR21064 has a 150 ns rise time (vs 130 ns) and a 10 V minimum supply, so verify the supply rail before substituting.

Can IR2301SPBF replace IR2301?

The IR2301SPBF is the lead-free (PbF) suffix variant of the base IR2301. The electrical specifications are identical — same 600 V bootstrap, 200/350 mA peak output, 130/50 ns rise/fall. The SPBF suffix indicates ROHS3 compliance. It is a direct replacement for the older non-PbF version.

What gate types does IR2301SPBF drive?

The IR2301SPBF drives IGBTs and N-Channel MOSFETs. It is configured for high-side or low-side drive with two independent, non-inverting channels.