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Infineon Technologies IR2213PBF — Analog & Data Acquisition

IR2213PBF Half-Bridge Gate Driver, 2A/2.5A, 1200V Bootstrap

MPNIR2213PBF
End of Life

Infineon IR2213PBF half-bridge gate driver, 2A/2.5A peak output, 1200V bootstrap, 14-DIP through-hole, -55°C to 150°C junction temperature.

$8.84Ref. price · indicative, final on quote
Packaging14-DIP (0.300", 7.62mm)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

IR2213PBF Technical Specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
Mounting typeThrough Hole
Voltage12V ~ 20V
Logic voltage - VIL, VIH6V, 9.5V
High side voltage - max (Bootstrap)1200 V
Current - peak output (Source, sink)2A, 2.5A
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Case14-DIP (0.300\", 7.62mm)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)25ns, 17ns

Product details

Half-bridge driver for 1200 V bus rails

The IR2213PBF is a half-bridge gate driver from Infineon designed to drive IGBTs and N-channel MOSFETs in high-voltage inverter stages. Its bootstrap supply handles up to 1200 V on the high side, making it a fit for motor drives, UPS systems, and industrial power supplies where the DC bus sits at several hundred volts. Two independent, non-inverting channels deliver 2 A source and 2.5 A sink peak current, which is enough to charge and discharge the gate capacitance of a TO-247 IGBT or MOSFET in the 30–50 A range without excessive switching loss. The 14-DIP through-hole package keeps the layout clean for a two-layer power board and simplifies hand-rework during prototyping or field repair.

Peak current and timing — what they mean for the gate drive

The 2 A source / 2.5 A sink peak rating determines how fast the gate voltage transitions. With typical rise and fall times of 25 ns and 17 ns into a standard load, the driver can keep switching losses low even at frequencies above 50 kHz, provided the gate resistor is sized correctly. The 12 V to 20 V supply range covers the common gate-drive rails for IGBTs (typically +15 V) and logic-level MOSFETs (down to +10 V). Logic input thresholds of 6 V (VIL) and 9.5 V (VIH) are compatible with 5 V and 3.3 V controllers when level-shifted — a 5 V PWM signal from a microcontroller will not reliably cross the 9.5 V VIH threshold without a translator or open-drain buffer pulling up to the driver supply.

Temperature range and deployment environment

Rated for a junction temperature range of -55°C to 150°C, the IR2213PBF is one of the few half-bridge drivers that can be specified into avionics power supplies, satellite DC-DC converters, and downhole instrumentation without a temperature derating exception. The 150°C TJ max also provides headroom in industrial motor-drive enclosures where ambient air can hit 85°C and the driver sits near heatsinked IGBTs. The through-hole DIP package (0.300" body width, 7.62 mm pitch) is a standard 0.1" grid footprint — easy to socket for test fixtures or to hand-replace in a rework oven.

Lifecycle and sourcing posture

The IR2213PBF carries an Active product status and is ROHS3 compliant. That said, the 14-DIP package is increasingly uncommon in high-volume surface-mount production lines; if your BOM is targeting automated assembly, you may want to evaluate a surface-mount alternate.

Frequently asked questions

What is the maximum output current of IR2213PBF?

The peak output current is 2 A source and 2.5 A sink, which is the rating for driving the gate capacitance during switching transitions. Continuous current is limited by package thermal capability and switching frequency.

Can IR2213PBF drive both high-side and low-side switches?

Yes, it is a half-bridge driver with two independent, non-inverting channels — one for the high-side floating supply (bootstrapped up to 1200 V) and one for the low-side referenced to ground.