Half-bridge driver for 1200 V bus rails
The IR2213PBF is a half-bridge gate driver from Infineon designed to drive IGBTs and N-channel MOSFETs in high-voltage inverter stages. Its bootstrap supply handles up to 1200 V on the high side, making it a fit for motor drives, UPS systems, and industrial power supplies where the DC bus sits at several hundred volts. Two independent, non-inverting channels deliver 2 A source and 2.5 A sink peak current, which is enough to charge and discharge the gate capacitance of a TO-247 IGBT or MOSFET in the 30–50 A range without excessive switching loss. The 14-DIP through-hole package keeps the layout clean for a two-layer power board and simplifies hand-rework during prototyping or field repair.
The 2 A source / 2.5 A sink peak rating determines how fast the gate voltage transitions. The 12 V to 20 V supply range covers the common gate-drive rails for IGBTs (typically +15 V) and logic-level MOSFETs (down to +10 V). Logic input thresholds of 6 V (VIL) and 9.5 V (VIH) are compatible with 5 V and 3.3 V controllers when level-shifted — a 5 V PWM signal from a microcontroller will not reliably cross the 9.5 V VIH threshold without a translator or open-drain buffer pulling up to the driver supply.
The 150°C TJ max also provides headroom in industrial motor-drive enclosures where ambient air can hit 85°C and the driver sits near heatsinked IGBTs. The through-hole DIP package (0.300" body width, 7.62 mm pitch) is a standard 0.1" grid footprint — easy to socket for test fixtures or to hand-replace in a rework oven.
That said, the 14-DIP package is increasingly uncommon in high-volume surface-mount production lines; if your BOM is targeting automated assembly, you may want to evaluate a surface-mount alternate.