Half-bridge gate driver for 600V bus rails
The Infineon IR2184SPBF is a high-voltage half-bridge gate driver designed to drive both N-channel power MOSFETs and IGBTs in synchronous buck, full-bridge, and motor-drive topologies. It integrates a bootstrap diode for the high-side supply, allowing operation up to 600 V on the high-side rail — suitable for 3-phase industrial drives, UPS systems, and 400 VDC bus converters.
1.9 A peak gate drive — what it buys you
The IR2184SPBF delivers a peak output current of 1.9 A source and 2.3 A sink, with a typical rise time of 40 ns and fall time of 20 ns. That drive strength is enough to switch medium-power IGBTs and MOSFETs in the 10–30 A range cleanly at switching frequencies up to several hundred kilohertz, provided the gate charge of the power device stays within the driver's dynamic capability. The asymmetric sink/source ratio helps pull the gate down faster than it charges — useful for reducing cross-conduction dead-time losses in hard-switched bridges.
Supply rails and logic thresholds
Supply voltage range is 10 V to 20 V, covering the standard 12 V and 15 V gate-drive rails used with most IGBTs and MOSFETs. The non-inverting input type means a logic high on the input turns on the corresponding output — no inversion to account for in firmware.
No hidden thermal pad underneath — the die heat exits through the leadframe into the board copper, so a short soak at 260°C peak reflow profile is fine.