Half-bridge gate driver for 600V bus rails
The IR2184PBF is a high-voltage, high-speed half-bridge gate driver from Infineon, designed to drive N-channel MOSFETs and IGBTs in synchronous or non-inverting configurations. It integrates a bootstrap diode for the high-side supply, allowing the device to drive the top transistor referenced to a 600 V maximum bus voltage. The 1.9 A source and 2.3 A sink peak output current is sized for medium-power IGBT modules and MOSFETs in motor drives, UPS systems, and DC-DC converters.
The 1.9 A source / 2.3 A sink peak current determines the maximum gate charge the driver can switch at a given frequency. For a typical IGBT with 100 nC total gate charge, the driver can charge the gate in roughly 50 ns — fast enough for 20-50 kHz switching without excessive dead-time. The 40 ns rise and 20 ns fall times are asymmetric: the faster fall helps clamp the gate during turn-off, reducing the risk of shoot-through in the half-bridge. The 10 V to 20 V supply range covers standard gate drive voltages for both MOSFETs (10-15 V) and IGBTs (15-20 V).
The 8-PDIP package is through-hole, which simplifies prototyping and rework but takes more board area than a surface-mount SOIC. The 0.300-inch body width is a standard DIP footprint, so it fits existing sockets and breadboards.
NRND — sourcing reality for the IR2184PBF
This means Infineon has flagged it for eventual phase-out — new designs should avoid it unless a last-time-buy is already secured.