Half-bridge gate driver for IGBT and N-channel MOSFET
The IR21844S from Infineon is a high-voltage, high-speed half-bridge gate driver designed to drive IGBTs and N-channel MOSFETs in synchronous configurations. It integrates a bootstrap diode for the high-side supply, rated to 600 V, which lets it directly drive the top device in a half-bridge leg without an isolated bias rail. The non-inverting input logic simplifies interface to a PWM controller or MCU.
Output drive and switching speed
Peak output current is 1.9 A source and 2.3 A sink, which is enough to charge and discharge the gate capacitance of medium-power IGBTs and MOSFETs in the 10–50 A range.
Supply and logic thresholds
The supply voltage range is 10 V to 20 V, matching standard gate drive bias rails for industrial and automotive power stages.
It is supplied in a 14-SOIC (0.154-inch width) surface-mount package, which fits standard reflow assembly and keeps board area small.
No official replacement or second-source part number is recorded in the available documentation. For new designs, consider the IR21844 (non-S suffix) or a newer Infineon half-bridge driver family such as the EiceDRIVER series — verify pin compatibility and parametric alignment against the BOM requirements.