The Infineon IR2183STRPBF drives IGBTs and N-channel MOSFETs in a half-bridge configuration. It delivers 1.9 A source and 2.3 A sink peak output current, with a typical 40 ns rise and 20 ns fall time.
600 V bootstrap — the application boundary
The 600 V maximum high-side voltage sets the hard ceiling for the DC bus this driver can float on. Below that rail, the bootstrap diode and capacitor scheme works with the internal charge pump to keep the high-side gate drive alive during PWM switching.
1.9 A / 2.3 A peak — sizing the gate charge
Peak output current of 1.9 A source and 2.3 A sink determines which IGBT or MOSFET modules this driver can switch within a reasonable dead-time window. The 40 ns rise time is the complementary constraint.
Temperature range and package — industrial and automotive inverter environment
Rated for junction temperatures from -40°C to 150°C, this driver covers the full industrial motor-drive thermal profile.
For buyers looking to dual-source, the Infineon IRS2005STRPBF is a functional peer in the same half-bridge driver class, though it delivers lower peak current (0.29 A) and slower rise/fall times (70 ns, 30 ns) — a trade-off worth evaluating if the load gate charge is light enough.