Half-bridge gate driver for N-channel MOSFET and IGBT stages
The IR2181STRPBF is a high-voltage half-bridge gate driver from Infineon, designed to drive IGBTs and N-channel MOSFETs in a half-bridge configuration. It integrates two independent, non-inverting driver channels in an 8-SOIC package. The high-side driver is referenced to a bootstrap supply rated to 600 V maximum, allowing the part to drive the top transistor in a half-bridge leg directly from a low-voltage supply rail.
Output current and switching speed
Peak output current is specified at 1.9 A source and 2.3 A sink, which provides the gate charge needed to switch medium-power MOSFETs and IGBTs in the 10–100 kHz range without excessive crossover conduction. This switching speed keeps dead-time margins tight; the downstream power stage must be matched to the driver's timing to avoid shoot-through.
Supply range and logic interface
The supply voltage range of 10 V to 20 V covers the typical bias rails for industrial gate drive — 12 V and 15 V are the common operating points. The undervoltage lockout thresholds are set within this window to ensure the driver does not turn on the power stage below the gate threshold.
Temperature grade and package
Rated for operation from -40°C to 150°C junction temperature, the IR2181STRPBF covers industrial and automotive ambient conditions. The 150°C TJ ceiling allows the driver to sit close to the power stage without derating the output current. The narrow-body SOIC footprint is a standard layout for low-to-medium pin-count gate drivers.
Production status and compliance
The part is ROHS3 compliant, meeting the latest restriction-of-hazardous-substances directive for lead-free assembly.