Half-bridge driver for N-channel MOSFETs — 600 V bootstrap, -40 to 125 °C
The IR2153SPBF is a half-bridge gate driver from Infineon designed to drive two N-channel MOSFETs in a synchronous half-bridge configuration. It integrates a 600 V bootstrap supply for the high-side floating gate drive and operates from a 10 V to 15.6 V supply rail. The RC input circuit allows oscillator frequency and dead-time programming with a single resistor-capacitor network.
Switching speed and dead-time — 80 ns rise, 45 ns fall
At switching frequencies above 100 kHz, the dead-time programmed by the RC network must account for these edges to avoid shoot-through. The 600 V bootstrap rating supports bus voltages up to 600 VDC, covering universal-input PFC stages and 3-phase rectified rails in industrial drives.
New designs should migrate to a pin-compatible successor — the IR2153S or IR21531S series from Infineon offer the same half-bridge topology with updated process technology and active lifecycle support. Existing BOM lines already qualified with the IR2153SPBF can be sourced through independent distribution for production support and last-time-buy coverage.
Package — 8-SOIC, tube shipment
The surface-mount footprint matches standard SOIC-8 land patterns — no thermal pad exposure, so the die relies on the leadframe and board copper for heat spreading.