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Infineon Technologies IR2153PBF — Power Management (PMIC / Gate Driver)

IR2153PBF Half-Bridge Driver, 600 V Bootstrap, 80/45 ns

MPNIR2153PBF
NRND

Infineon IR2153PBF half-bridge gate driver, 600 V bootstrap, 80 ns rise / 45 ns fall, 10 V to 15.6 V supply, N-channel MOSFET, through-hole 8-DIP, -40°C to 125°C.

$2.3100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IR2153PBF specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeRC Input Circuit
Channel typeSynchronous
MountingThrough Hole
Supply voltage10V ~ 15.6V
High side voltage - max (Bootstrap)600 V
Operating temperature-40°C ~ 125°C (TJ)
PackageTube
Case8-DIP (0.300\", 7.62mm)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)80ns, 45ns

Product details

Half-bridge driver with integrated oscillator and 600 V bootstrap

The Infineon IR2153PBF is a self-oscillating half-bridge gate driver designed for N-channel MOSFETs in a synchronous half-bridge configuration. The bootstrap supply handles up to 600 V on the high side, making it suitable for offline AC-DC converters, electronic ballasts, and half-bridge inverters up to that rail voltage. The 80 ns typical rise time and 45 ns fall time keep switching losses manageable at common 50-100 kHz operating frequencies.

NRND — plan the last-time-buy window

This means Infineon has flagged the part for eventual discontinuation — new designs should not use it, and existing production runs need to secure final inventory or qualify a replacement before the last-time-buy closes. For sustainment programs already using the IR2153PBF, the immediate action is to estimate remaining lifetime demand and place a last-time-buy order through independent distribution.

Switching speed and dead-time trade-offs

The 80 ns rise and 45 ns fall times are typical at the rated supply and load — actual edge rates depend on the external MOSFET gate charge and the RC timing components. In designs switching above 100 kHz, the internal dead-time (typically 1.2 µs) may limit the maximum duty cycle or force a lower frequency to avoid shoot-through. The RC input circuit lets the designer set the oscillator frequency with one resistor and one capacitor. The internal dead-time is fixed, so the frequency selection must account for the dead-time as a fraction of the period — at 100 kHz the dead-time consumes about 12 % of the cycle, which may be acceptable for resonant loads but tight for hard-switched inductive loads.

Package and footprint — 8-DIP through-hole

The IR2153PBF is supplied in an 8-DIP (0.300-inch, 7.62 mm) through-hole package, designated 8-PDIP by the supplier. The through-hole format simplifies prototyping and hand-assembly but occupies more board area than a surface-mount alternative. The tube shipping medium is standard for DIP packages.

Frequently asked questions

What is the difference between IR2153 and IR2153PBF?

The IR2153PBF is the lead-free (PbF) version of the base IR2153. The electrical specifications — 600 V bootstrap, 80/45 ns switching, 10 V to 15.6 V supply — are identical. The PBF suffix indicates RoHS-compliant plating on the leads; the die and package are otherwise the same.

What is the best replacement for IR2153PBF?

Infineon has not published an official direct replacement for the IR2153PBF. For new designs, consider the IR2153S (surface-mount SOIC-8 variant) if board space allows, or a newer self-oscillating half-bridge driver such as the IRS2153D with adjustable dead-time. Validate pin compatibility and RC timing before substituting.

Can IR2153PBF be used with N-channel MOSFETs?

Yes — the IR2153PBF is specifically designed to drive N-channel MOSFETs in a half-bridge configuration. The high-side driver uses a bootstrap capacitor referenced to the switch node, so the bootstrap diode and capacitor must be rated for the full DC bus voltage (up to 600 V).