Half-bridge driver with 600 V bootstrap — what it drives
The IR21531PBF from Infineon is a half-bridge gate driver designed for N-channel MOSFETs in synchronous half-bridge configurations. It integrates a 600 V bootstrap diode for the high-side supply, letting it drive the top FET directly from a single bias rail between 10 V and 15.6 V. The RC input circuit sets the oscillator timing externally — no external dead-time adjustment needed; the internal fixed dead-time is matched to the 80 ns typ rise and 45 ns typ fall times. This suits hard-switched half-bridge topologies in offline AC-DC converters, PFC stages, and motor-drive auxiliary supplies.
NRND — plan the BOM migration
For existing production, this means the part remains available through the current channel, but new BOMs should evaluate a pin-compatible alternative within the IR2153x family before the allocation window tightens.