Skip to main content
Log in
Infineon Technologies IR21531D — Power Management (PMIC / Gate Driver)

IR21531D Half-Bridge Gate Driver, 600 V Bootstrap, 80/45 ns

MPNIR21531D
Obsolete

Infineon IR21531D half-bridge gate driver, N-Channel MOSFET, RC input circuit, synchronous channel, 10 V to 15.6 V supply, 600 V bootstrap, 80 ns rise / 45 ns fall, -40°C to 125°C, 8-DIP through-hole package.

$2.9600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IR21531D specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeRC Input Circuit
Channel typeSynchronous
MountingThrough Hole
Supply voltage10V ~ 15.6V
High side voltage - max (Bootstrap)600 V
Operating temperature-40°C~125°C(TJ)
PackageTube
Case8-DIP (0.300\", 7.62mm)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)80ns, 45ns

Product details

Half-bridge gate driver with integrated bootstrap

The Infineon IR21531D is a half-bridge gate driver designed for driving two N-channel MOSFETs in a synchronous configuration. It integrates a bootstrap diode for the high-side supply, allowing a single 10 V to 15.6 V bias rail to drive both the low-side and high-side gates. The RC input circuit sets the oscillator frequency and dead-time with external passive components, making it a self-oscillating driver suited for resonant and half-bridge converter topologies.

Switching speed and high-voltage capability

The 600 V maximum bootstrap voltage rating defines the DC bus voltage ceiling for offline supplies and DC bus applications with adequate derating.

Frequently asked questions

What is the difference between IR21531 and IR21531D?

The 'D' suffix typically indicates a different package variant or minor electrical revision. The IR21531D is in an 8-DIP through-hole package; the non-D variant may be offered in a different package. Confirm the exact datasheet for parametric differences.