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Infineon Technologies IR2151S — Power Management (PMIC / Gate Driver)

IR2151S Half-Bridge Gate Driver, 600V Bootstrap, 8-SOIC

MPNIR2151S
Obsolete

Infineon IR2151S half-bridge gate driver, 8-SOIC, 600 V bootstrap, 125 mA source / 250 mA sink peak output, 10 V to 20 V supply, -40°C to 150°C junction temperature.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IR2151S specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeRC Input Circuit
Channel typeSynchronous
MountingSurface Mount
Supply voltage10V ~ 20V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)125mA, 250mA
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)80ns, 40ns

Product details

Half-bridge driver with integrated RC oscillator

The Infineon IR2151S is a self-oscillating half-bridge gate driver designed for IGBT and N-channel MOSFET switching stages. The two-channel synchronous output drives the high-side and low-side switches with a typical 80 ns rise and 40 ns fall time, providing clean transition edges for the 125 mA source and 250 mA sink peak current capability.

600 V bootstrap — what the rail rating means

The high-side bootstrap is rated to 600 V maximum. The 10 V to 20 V supply range on the low-side bias rail means the undervoltage lockout thresholds are fixed for standard MOSFET gate thresholds.

No official successor part is recorded in the lifecycle data, meaning any substitute requires a board-level review of pinout, oscillator timing, and UVLO thresholds. Sourcing is through independent distribution against an RFQ.

Frequently asked questions

Where can I buy IR2151S online?

The IR2151S is obsolete and sourced through independent distribution. Submit an RFQ for current availability and pricing — quantities are quoted to order against your BOM line.

Can IR2151S drive IGBTs?

Yes, the IR2151S is specified for IGBT and N-channel MOSFET gates with a 125 mA source and 250 mA sink peak current. The 80 ns rise and 40 ns fall times are adequate for small- to medium-die IGBTs in half-bridge configurations up to a few tens of kHz switching frequency, limited by the RC oscillator timing.

What is the difference between IR2151S and IR2153?

The IR2151S and IR2153 share the same half-bridge driver core and 8-SOIC package, but they are not pin-compatible without a layout change. The IR2153 uses a fixed deadtime and a different oscillator pin arrangement. Do not substitute without comparing the datasheet pinout and RC timing circuit.