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Infineon Technologies IR2136JPBF-INF — Discrete Semiconductors

IR2136JPBF-INF 3-Phase Bridge Driver, 600V Bootstrap

MPNIR2136JPBF-INF
End of Life

Infineon IR2136JPBF-INF 3-Phase Bridge Driver, Gate Type IGBT/N-Channel MOSFET, Input Non-Inverting, 6 Drivers, Half-Bridge, 10V~20V Supply, 600V Bootstrap, 200mA/350mA Peak, 44-LCC J-Lead, -40°C~125°C.

$2.88Ref. price · indicative, final on quote
Packaging44-LCC (J-Lead)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IR2136JPBF-INF specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel type3-Phase
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH0.8V, 3V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)200mA, 350mA
Operating temperature-40°C ~ 125°C (TA)
PackageBulk
Case44-LCC (J-Lead)
Number of drivers6
Driven configurationHalf-Bridge
Rise (Fall time)125ns, 50ns

Product details

Three-Phase Gate Driver for Motor-Drive and Inverter Stages

The Infineon IR2136JPBF-INF is a 3-phase half-bridge gate driver IC designed to drive IGBTs and N-channel MOSFETs in inverter and motor-drive stages. It integrates six drivers in a single surface-mount package, with a bootstrap supply rated to 600 V for the high-side channels.

Switching Speed and Dead-Time Budget

The typical rise time of 125 ns and fall time of 50 ns define the switching transition window. The 600 V bootstrap rating covers bus architectures with margin for switching transients.

The surface-mount package body is 16.59 mm × 16.59 mm. The J-lead footprint provides a reliable solder joint under thermal cycling, and the package outline suits automated pick-and-place.

The ROHS3 compliance covers the latest exemption updates, so it passes EU and Chinese RoHS requirements for the foreseeable future.

Frequently asked questions

What gate types does the IR2136JPBF-INF support?

The driver is specified for IGBT and N-channel MOSFET gates. The 200 mA source and 350 mA sink peak current is adequate for medium-power discrete devices and smaller IGBT modules. For larger modules requiring higher gate current, a booster stage would be needed.