600 V bootstrap, 2 A peak — half-bridge driver for IGBT and MOSFET gates
The IR2113 is a high-voltage half-bridge gate driver from Infineon (originally International Rectifier) designed to drive IGBTs and N-Channel MOSFETs in a half-bridge configuration. It integrates a bootstrap supply for the high-side gate, rated to 600 V maximum, and delivers 2 A peak source and sink current to each of its two independent, non-inverting channels. The supply voltage range spans 3.3 V to 20 V.
For new designs, evaluate current-production half-bridge drivers from Infineon or competitors, verifying pin compatibility and parametric differences against the IR2113 datasheet.
14-DIP through-hole package — layout and thermal considerations
The IR2113 is supplied in a 14-DIP (0.300", 7.62 mm) through-hole package. The logic input thresholds are specified at VIL = 6 V and VIH = 9.5 V. The bootstrap diode is internal; the bootstrap capacitor must be sized externally per the datasheet guidelines to maintain sufficient gate drive voltage during the high-side on-time.