500V bootstrap, 2A peak — half-bridge gate driver for IGBT and MOSFET stages
The IR2110STR is a high-voltage half-bridge gate driver from Infineon, designed to drive IGBTs and N-channel MOSFETs in inverter and converter stages. It integrates bootstrap operation for the high-side channel, with a maximum high-side voltage of 500 V, and delivers 2 A peak source and sink current to the gates. Supply voltage spans 3.3 V to 20 V, covering common logic and bias rails from 5 V MCU interfaces up to 15 V gate drive supplies. The independent non-inverting input channels allow flexible PWM control from a microcontroller or dedicated controller. Rise and fall times are 25 ns and 17 ns typical, enabling fast switching transitions that minimise switching loss in the power stage.
For new designs or volume production, a pin-compatible alternative from the same functional family should be evaluated. Buyers with existing BOM lines should plan for a qualified replacement or last-time-buy stock coverage.