500 V bootstrap, 2 A peak — half-bridge driver for IGBT and MOSFET gates
The Infineon IR2110PBF is a high-voltage half-bridge gate driver designed to drive IGBTs and N-channel MOSFETs in a half-bridge configuration. Its bootstrap supply supports a high-side voltage up to 500 V, making it suitable for motor drives, UPS systems, and switch-mode power supplies where the top switch floats above ground. This drive strength handles the gate charge of medium-power IGBTs and MOSFETs without excessive switching loss. The supply voltage range spans 3.3 V to 20 V, allowing operation from low-voltage logic rails up to the higher bias voltages typical for IGBT gate drive. The logic input thresholds are set at 6 V (VIL) and 9.5 V (VIH), compatible with 5 V and 12 V logic families.
This means Infineon still manufactures the part for existing production, but it is no longer the preferred choice for new BOMs. A design-in freeze is in effect — new projects should evaluate the current-generation replacement. For ongoing production or repair of existing boards, the IR2110PBF remains available through independent distribution.
Through-hole DIP-14 — footprint and thermal notes
The package is supplied in Tube form.