Half-bridge driver for IGBT and MOSFET gates
The Infineon IR2110-2PBF is a high-voltage half-bridge gate driver designed to drive IGBTs and N-Channel MOSFETs in a bootstrap configuration. It delivers 2 A peak source and sink current with a typical rise time of 25 ns and fall time of 17 ns, which sets the switching loss floor and dead-time budget for the bridge. The high-side bootstrap supply is rated to 500 V, defining the maximum DC bus voltage the driver can float above. The two channels operate independently with non-inverting inputs, and the logic thresholds are set at 6 V (VIL) and 9.5 V (VIH) — a 3.5 V hysteresis window that rejects noise on the input lines.
The through-hole mounting suits prototype builds, rework, and low-volume production where a socketed driver is preferred.
The 16-PDIP package has a 0.300" body width with 7.62 mm lead pitch — a standard DIP footprint that fits through-hole prototyping boards and socket strips.