Half-bridge gate driver with 500 V bootstrap — what it handles
The IR2110-2 is a high-voltage half-bridge gate driver from Infineon designed to drive IGBTs and N-channel MOSFETs in a half-bridge configuration. It delivers 2 A peak sourced and 2 A peak sunk output current, with a bootstrap supply rated to 500 V — the ceiling for the high-side floating supply. The two channels are independent and non-inverting. Supply range spans 3.3 V to 20 V.
2 A peak output and 25 ns rise time — switching speed headroom
Typical rise time is 25 ns and fall time 17 ns, which means the driver can charge the gate capacitance of a moderate-power IGBT or MOSFET fast enough for switching frequencies in the tens of kHz without excessive cross-conduction. The 2 A peak capability handles the initial gate-charge surge; the actual switching speed in-circuit depends on the total gate charge of the chosen power device and the external gate resistor. Logic thresholds are set at 6 V (VIL) and 9.5 V (VIH).
Obsolete — last-time-buy window is closed
The official last-time-buy window has passed, so new stock is not being manufactured. Availability is limited to inventory already in the channel — independent-distributor stock that was produced before the EOL date. No official successor is listed on the manufacturer's records. The original IR2110 (without the -2 suffix) shares the same base product number and is often the closest functional alternative, but the -2 variant had a specific 14-lead 16-DIP footprint that differs from the standard IR2110's 16-lead DIP.
16-PDIP through-hole — board-level fit
The 0.300 inch row spacing is the standard narrow DIP footprint common on through-hole power boards and evaluation platforms. The package ships in Tube form.
Because the IR2110-2 is obsolete, it is sourced strictly from independent-distributor and broker inventory. For volume production, qualifying a pin-compatible or functionally equivalent current-production driver is the recommended path to avoid single-source obsolescence risk.