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Infineon Technologies IR2110 — Power Management (PMIC / Gate Driver)

IR2110 Half-Bridge Gate Driver, 500 V Bootstrap, 2 A Peak

MPNIR2110
Obsolete

Infineon IR2110 half-bridge gate driver, 500 V bootstrap, 2 A peak source/sink, 25 ns rise, 17 ns fall, 3.3 V to 20 V supply, through-hole 14-DIP, -40°C to 150°C junction.

$3.2400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IR2110 specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingThrough Hole
Supply voltage3.3V ~ 20V
Logic voltage - VIL, VIH6V, 9.5V
High side voltage - max (Bootstrap)500 V
Current - peak output (Source, sink)2A, 2A
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Case14-DIP (0.300\", 7.62mm)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)25ns, 17ns

Product details

500 V bootstrap — the application ceiling

The IR2110 is a high-voltage half-bridge gate driver rated for a bootstrap supply up to 500 V on the high side. That 500 V ceiling sets the bus voltage limit for motor drives, UPS inverters, and switch-mode power supplies where this driver sits between the PWM controller and the IGBT or N-Channel MOSFET power stage. Two independent channels, each capable of 2 A peak source and sink current, give the IR2110 the drive strength to switch large-gate-charge devices through the 25 ns rise and 17 ns fall times typical at the output.

Supply and logic interface

The logic input thresholds — VIL at 6 V, VIH at 9.5 V — are referenced to the driver's own VSS, not the controller supply, so the interface needs a clean ground return between the two.

No official successor is listed on the record.

Supplied in a 14-lead DIP (0.300-inch body, 7.62 mm pitch) with through-hole mounting — the same footprint as the industry-standard IR2110 family.

Frequently asked questions

Can the IR2110 drive IGBTs and N-Channel MOSFETs?

Yes, the IR2110 is specified for both IGBT and N-Channel MOSFET gate drive. The 2 A peak output current and 25 ns rise time are sufficient for medium-power devices in half-bridge topologies up to 500 V bus.