Half-bridge driver with 600 V bootstrap — what it handles
The IR2104S is a high-voltage half-bridge gate driver from Infineon designed to drive IGBTs and N-channel MOSFETs in a synchronous half-bridge configuration. It integrates a bootstrap diode rated for a high-side voltage of 600 V, letting it float the top gate drive above a DC bus rail in motor drives, UPS inverters, and switch-mode power supplies. The non-inverting input simplifies control logic — a single PWM signal from a controller or MCU drives both the high-side and low-side outputs with built-in dead-time to prevent shoot-through. The 210 mA source and 360 mA sink peak output current is sized for medium-power IGBT modules and MOSFETs with gate charge up to roughly 100 nC at moderate switching frequencies.
Supply range and thermal envelope
The supply range is 10 V to 20 V. The junction temperature rating is -40°C to 150°C. The 100 ns typical rise and 50 ns fall time keep switching losses low in the 20–100 kHz range typical for motor-drive PWM.
The IR2104S shares the same base product number (IR2104) as the through-hole IR2104, but the 'S' suffix denotes the SOIC-8 surface-mount package — not a functional difference.