Half-bridge gate driver for 600 V bus applications
The Infineon IR2104PBF is a half-bridge gate driver for N-channel MOSFETs and IGBTs. It integrates a bootstrap diode for the high-side floating supply, rated to 600 V. The 8-PDIP through-hole package suits prototype builds and low-volume production.
210 mA source, 360 mA sink — gate drive muscle
Peak output current is 210 mA sourcing and 360 mA sinking. The asymmetric sink rating pulls the gate low faster than it charges, reducing cross-conduction in hard-switched half-bridges.
NRND — last-time-buy planning required
Infineon lists the IR2104PBF as Not Recommended for New Design (NRND). New designs should migrate to the current-production IR2104S or IR2104STRPBF (SOIC-8) or evaluate the pin-compatible IR2104-2 family if through-hole is mandatory. For existing BOM lines, the NRND status means a last-time-buy window is open — secure the forecasted lifetime volume or qualify an alternate before the final order cutoff.
Operating supply spans 10 V to 20 V, matching the gate-drive voltage range for standard MOSFETs and IGBTs. The non-inverting input type means the HO and LO outputs follow the IN pin state directly; no deadtime generation is integrated, so the PWM source must insert deadtime in firmware or external logic.
150 °C junction — motor-drive and industrial ambient
The 150 °C Tj ceiling allows the die to run hot when the ambient is elevated and self-heating from gate-drive losses adds to the temperature. The 8-PDIP package has a junction-to-ambient thermal resistance around 100 °C/W, so forced airflow or a heatsink is unnecessary at typical gate-drive duty cycles.