Half-bridge gate driver for IGBT and N-channel MOSFET
The Infineon IR2103SPBF is a half-bridge gate driver IC designed to drive IGBTs and N-channel MOSFETs in high- and low-side configurations. It provides two independent output channels with a bootstrap supply capable of handling up to 600 V on the high side, making it a fit for motor drives, switch-mode power supplies, and DC-DC converters operating from a 10 V to 20 V bias rail. The driven configuration is half-bridge, with independent channel control and both inverting and non-inverting input options, giving the designer flexibility in PWM signal routing.
Peak output current and switching speed
The asymmetric sink/source ratio helps drive the Miller plateau of the power switch, reducing cross-conduction during the dead-time interval.
600 V bootstrap and supply range
The high-side bootstrap voltage is rated to 600 V maximum. The supply voltage range is 10 V to 20 V.
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