Half-bridge gate driver for IGBT and N-channel MOSFET
The Infineon IR2103S is a high-voltage half-bridge gate driver designed to drive IGBTs and N-channel MOSFETs in a half-bridge configuration. It integrates a bootstrap diode rated for 600 V on the high side, allowing the high-side driver to float up to that rail voltage. The two output channels are independent, with separate inverting and non-inverting inputs for flexible dead-time control.
210 mA source, 360 mA sink — gate-drive muscle for mid-power stages
Peak output current is rated 210 mA source and 360 mA sink. That sink-heavy ratio is intentional — it pulls the gate down faster than it charges it, which helps prevent shoot-through during the dead-time interval. The supply range is 10 V to 20 V, covering standard 12 V and 15 V gate-drive rails.
Obsolete — plan for a replacement or source from surplus
For new designs, look at the IR2104 or other pin-compatible half-bridge drivers in the same family — but confirm the input logic and dead-time matching against your BOM.
8-SOIC footprint — standard surface-mount layout
The 8-pin SOIC is a common footprint for gate drivers, so a board layout designed for a similar part (e.g. IR2104, IR2110 in SOIC-8) should accept this device with no PCB changes.