600 V bootstrap — the high-side voltage ceiling
The IR2103PBF is a half-bridge gate driver from Infineon designed to drive IGBTs and N-channel MOSFETs in a half-bridge configuration. Its key differentiator is the 600 V maximum bootstrap voltage on the high side, which sets the upper DC-link voltage limit for motor drives, UPS inverters, and switch-mode power supplies. The two independent channels — one high-side, one low-side — accept both inverting and non-inverting input logic, giving the controller flexibility on polarity.
Gate drive current and switching speed
Peak output current is rated 210 mA source and 360 mA sink. This asymmetry favours fast turn-off of the power switch — the higher sink current pulls the gate down quickly, reducing cross-conduction dead-time margin. The supply range of 10 V to 20 V covers standard gate drive rails for both MOSFETs (10-15 V) and IGBTs (15-20 V).
Infineon no longer manufactures this exact ordering code in production volumes. No official successor is listed on the Infineon cross-reference for this exact PDIP variant, so any replacement must be validated against the board footprint and the 8-DIP socket.
The 8-PDIP through-hole package (0.300-inch body width) is a legacy footprint; it suits socketed prototyping, low-volume production, or rework scenarios where a surface-mount package would complicate manual replacement. The Tube shipping medium is the factory packaging for this DIP variant.