Infineon no longer manufactures this part in production volumes.
Half-bridge driver with 600 V bootstrap
The IR2101S is a high-voltage half-bridge gate driver from Infineon, designed to drive IGBTs and N-channel MOSFETs in a half-bridge configuration. It integrates a bootstrap diode rated for 600 V maximum on the high side, so the floating high-side supply can ride a DC bus up to that voltage. The two output channels are independent and non-inverting, giving the controller direct phase-leg control.
210/360 mA peak output — sizing the gate drive
Peak source current is 210 mA and peak sink current is 360 mA. That sink-to-source asymmetry pulls the gate down faster than it charges it, which helps prevent shoot-through during the dead-time interval.
100/50 ns rise/fall — dead-time planning
Typical rise time is 100 ns and fall time is 50 ns into a standard load. The 2:1 ratio between rise and fall matches the asymmetric output current. When programming dead-time in the controller firmware, budget at least 150 ns of margin beyond these edges to avoid cross-conduction — the actual edge rate depends on the external gate resistor and the input capacitance of the power switch.
Supply voltage range is 10 V to 20 V, covering the common 12 V and 15 V bias rails used in industrial power supplies and motor drives.
8-SOIC package — board fit
The IR2101S is supplied in an 8-pin SOIC-8 package (0.154-inch body width, 3.90 mm), surface-mount. The shipping medium is Tube. The narrow SOIC footprint keeps the driver close to the power stage, minimising gate-loop inductance — a layout consideration that matters more at higher switching frequencies.