The Infineon IR2101PBF is a high-voltage, half-bridge gate driver designed to drive IGBTs and N-channel MOSFETs in a half-bridge configuration. It integrates a bootstrap diode for the high-side supply, allowing direct drive of the upper transistor with a floating reference up to 600 V. Two independent, non-inverting channels provide the low-side and high-side gate signals, with a 210 mA source and 360 mA sink peak output current rating.
The IR2101PBF carries a Not Recommended for New Designs (NRND) lifecycle status. This means Infineon is not actively marketing the part for new projects, but it remains available through existing inventory and last-time-buy windows. For production builds already qualified on this driver, the NRND flag signals that a pin-compatible replacement should be evaluated for the next BOM revision.
Parametric fit – supply, output drive, and timing
The driver operates from a 10 V to 20 V supply, compatible with standard 12 V or 15 V bias rails common in industrial motor drives and power converters. The 210 mA source and 360 mA sink peak current is sufficient to drive medium-gate-charge IGBTs (e.g., 50-100 nC) at switching frequencies up to 100 kHz, depending on the external gate resistor.
Through-hole 8-PDIP – board integration note
Housed in an 8-pin PDIP (0.300-inch, 7.62 mm body width), the IR2101PBF is a through-hole part suited for prototype boards, rework-friendly designs, or applications where vibration resistance of a soldered lead is preferred over surface-mount. The 8-PDIP footprint is widely compatible with standard DIP sockets, easing field replacement.